Application of carrier lifetime control by irradiation to 1.2kV NPT IGBTs

Author

Siemieniec, Ralf ; Herzer, Reinhard ; Netzel, Mario ; Lutz, Josef

Author_Institution

Dept. of Solid-State Electron., Technische Hochschule Ilmenau, Germany

Volume

1

fYear

2004

fDate

16-19 May 2004

Firstpage

167

Abstract

Device simulation, based on an extended recombination model and previously determined recombination center parameters, serves as design tool for carrier-lifetime controlled, state-of-the-art 1.2kV NPT IGBTs. Homogenous and local recombination center profiles are considered. The sensitivity of important device characteristics to the type of the recombination center profile is investigated in simulation and experiment. A possible application, the improvement of reverse leakage properties of reverse blocking capable NPT IGBTs, is discussed.

Keywords

carrier lifetime; electron-hole recombination; insulated gate bipolar transistors; leakage currents; power semiconductor devices; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; 1.2 kV; 1.2kV NPT IGBTs; carrier lifetime control; carrier-lifetime controlled NPT IGBTs; design tool; device simulation; extended recombination model; homogenous recombination center profiles; irradiation; local recombination center profiles; recombination center parameters; reverse blocking; reverse leakage properties; Charge carrier lifetime; Electron traps; Insulated gate bipolar transistors; Leakage current; Manufacturing; Poisson equations; Radiative recombination; Silicon; Solid modeling; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2004. 24th International Conference on

Print_ISBN

0-7803-8166-1

Type

conf

DOI

10.1109/ICMEL.2004.1314582

Filename

1314582