DocumentCode :
415539
Title :
Three-dimensional topography simulation for deposition and etching processes using a level set method
Author :
Sheikholeslami, A. ; Heitzinger, C. ; Grasser, T. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Vienna, Austria
Volume :
1
fYear :
2004
fDate :
16-19 May 2004
Firstpage :
241
Abstract :
We present, the application of level set and fast marching methods to the simulation of surface topography of a wafer in three dimensions for deposition and etching processes. These simulations rest on many techniques, including a narrow band level set method, fast marching for the Eikonal equation, extension of the speed function, transport models, visibility determination, and an iterative equation solver.
Keywords :
integrated circuit modelling; integrated circuit testing; surface topography measurement; Eikonal equation; deposition; etching processes; fast marching methods; iterative equation solver; level set method; narrow band level set method; speed function; three-dimensional topography simulation; transport models; visibility determination; Computational modeling; Equations; Etching; Level set; Microelectronics; Narrowband; Rough surfaces; Solid modeling; Surface roughness; Surface topography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
Type :
conf
DOI :
10.1109/ICMEL.2004.1314606
Filename :
1314606
Link To Document :
بازگشت