• DocumentCode
    415541
  • Title

    Alternative methods of parameters extraction based on the Pseudo-MOS technique

  • Author

    Ravariu, C. ; Rusu, A. ; Ravariu, F. ; Dobrescu, L. ; Dobrescu, D.

  • Author_Institution
    Dept. of Microelectron., Bucharest Univ., Romania
  • Volume
    1
  • fYear
    2004
  • fDate
    16-19 May 2004
  • Firstpage
    249
  • Abstract
    The pseudo-MOS transistor is a dedicated device for in situ electrical characterization of the SOI wafers. In this paper were extracted some parameters for a 200nm Si-film manufactured in SIMOX technique. In this scope, experimental Curves ID-VG, ID-VD in inversion and accumulation were used, This work presents an alternative method for the threshold and fiat-band voltages extraction, using the Non-linear Electrical Conduction Theorem.
  • Keywords
    MOSFET; SIMOX; semiconductor device models; semiconductor device testing; silicon-on-insulator; 200 nm; Nonlinear Electrical Conduction Theorem; Pseudo-MOS technique; SIMOX technique; SOI wafers; electrical characterization; parameters extraction; pseudo-MOS transistor; Current measurement; Dielectric substrates; Doping; Extrapolation; MOSFETs; Microelectronics; Parameter extraction; Pulp manufacturing; Silicon; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2004. 24th International Conference on
  • Print_ISBN
    0-7803-8166-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2004.1314608
  • Filename
    1314608
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=415541