Title :
Effect of the a-SiC:H thickness in the conduction mechanisms of a-SiC:H/c-Si heterojunction diodes
Author :
Cabre, R. ; Pallarès, J. ; Marsal, L.F.
Author_Institution :
Departament of Electron. Eng., Univ. Rovira i Virgili, Tarragona, Spain
Abstract :
The conduction mechanisms governing the dark current-voltage characteristics of a-SiC:H/a-Si:H/c-Si pin heterojunction diodes are determined by the use of an electrical model. In particular, the influence of the a-SiC:H thickness layer on the conduction mechanisms is studied. For a 5 nm thick a-SiC:H layer, the conduction mechanisms of the heterojunction diode are the same than a homojunction Silicon diode.
Keywords :
amorphous semiconductors; dark conductivity; electrical conductivity; elemental semiconductors; hydrogen; semiconductor diodes; semiconductor heterojunctions; silicon; silicon compounds; 5 nm; SiC:H-Si; a-SiC:H thickness; a-SiC:H/c-Si heterojunction diodes; conduction mechanisms; dark current-voltage characteristics; electrical model; heterojunction diode; Amorphous materials; Crystallization; Diodes; Fabrication; Heterojunctions; Silicon; Space charge; Spontaneous emission; Temperature distribution; Voltage;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314619
