Modification of amorphous level 15 AIM SPICE model to include new subthreshold model

Author

Reséndiz, L. ; Iñiguez, B. ; Estrada, M. ; Cerdeira, A.

Author_Institution

Departamento de Ingenieria E1ectrica, CINVESTAV-IPN, Mexico City, Mexico

Volume

1

fYear

2004

fDate

16-19 May 2004

Firstpage

291

Abstract

Recently we presented a new expression to model mobility in a-Si:H TFTs model parameters in the subthreshold region and the procedure for the extraction of basic model parameters in this region. The main characteristics of extraction procedure is the use of the Integral Function Method (IFM), that permits to extract in a simple and direct way basic model parameters from experimental transfer and output characteristics. In this work we report results of comparing simulated in AIMSpice a-Si:H TFTs after including the new subthreshold model, with experimental curves. The model and extraction procedure has been tested for a-Si:H TFTs with channel length down to 4 μm, observing good coincidence between simulated, using parameter values obtained with our new extraction procedure and experimental curves, in all working regions of the devices.

Keywords

SPICE; amorphous semiconductors; hydrogen; semiconductor device models; silicon; thin film transistors; 4 micron; Integral Function Method; Si:H; a-Si:H TFTs model parameters; amorphous level 15 AIM SPICE model; channel length; experimental curves; extraction procedure; model mobility; subthreshold model; Amorphous materials; Computer hacking; Equations; Optimization methods; SPICE; Silicon; Temperature; Testing; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2004. 24th International Conference on

Print_ISBN

0-7803-8166-1

Type

conf

DOI

10.1109/ICMEL.2004.1314620

Filename

1314620