• DocumentCode
    415546
  • Title

    On the current saturation in low dimensional MOSFETs

  • Author

    Benfdila, A. ; Bensidhoum, M.T.

  • Author_Institution
    Fac. of Electr. & Comput. Eng., Univ. M. Mammeri, Tizi-Ouzou, Algeria
  • Volume
    1
  • fYear
    2004
  • fDate
    16-19 May 2004
  • Firstpage
    299
  • Abstract
    Submicron MOSFETs are the issue for ULSI integrated circuits. Several current models are proposed to explain the drain current behavior in the saturation region of the ID-VD characteristic curve. Mainly, we can distinguish two types: the classical and low dimension current modeling. In the present work a survey of Current voltage models is presented aiming a contribution to interpret the non-saturation phenomenon, which are severe in low dimensional devices.
  • Keywords
    MOSFET; leakage currents; semiconductor device models; ULSI integrated circuits; characteristic curve; current saturation; drain current behavior; low dimensional MOSFETs; saturation region; Acceleration; Leakage current; MOSFET circuits; Reflection; Shape; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2004. 24th International Conference on
  • Print_ISBN
    0-7803-8166-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2004.1314622
  • Filename
    1314622
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=415546