DocumentCode
415547
Title
Physical modeling of double-gate transistor
Author
Zebrev, G.I.
Author_Institution
Dept. of Microelectron., Moscow Eng. Phys. Inst., Russia
Volume
1
fYear
2004
fDate
16-19 May 2004
Firstpage
303
Abstract
A new compact physical model for nano-scale double-gate transistors has been proposed. Crossover between diffusion and ballistic regimes of carrier´s transport has been examined.
Keywords
carrier mobility; electron density; semiconductor device models; transistors; ballistic regimes; carrier transport; compact physical model; diffusion regime; double-gate transistor; Analytical models; Channel bank filters; Electrons; Electrostatics; MOSFET circuits; Microelectronics; Numerical simulation; Poisson equations; Silicon; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2004. 24th International Conference on
Print_ISBN
0-7803-8166-1
Type
conf
DOI
10.1109/ICMEL.2004.1314623
Filename
1314623
Link To Document