DocumentCode
415556
Title
High density integration of low current phase-change RAM using structural modification based on 0.18 μm-CMOS technologies
Author
Jeong, G.T. ; Koo, H.C. ; Hwang, Y.N. ; Lee, S.H. ; Ahn, S.J. ; Lee, S.Y. ; Ryoo, K.C. ; Hong, J.S. ; Yeung, F. ; Oh, J.H. ; Kim, H.-J. ; Jeong, W.C. ; Park, J.H. ; Koh, G.H. ; Kim, Y.T. ; Jeong, H.S. ; Kinam Kim
Author_Institution
Semicond. R&D Div., Samsung Electron. Co. Ltd., South Korea
Volume
1
fYear
2004
fDate
16-19 May 2004
Firstpage
389
Abstract
PRAM is a promising memory that can solve the problems of conventional memory. Writing current reduction is the most important technical challenges in order to maximize the advantage of PRAM in scaling. We will present the high density 64Mb PRAM based on 0.18 μm CMOS technologies. And Various approaches to reduce the writing Current will be reviewed.
Keywords
CMOS integrated circuits; concurrency theory; integrated circuit reliability; 0.18 μm-CMOS technologies; 0.18 micron; PRAM; high density integration; low current phase-change RAM; structural modification; writing current reduction; Amorphous materials; CMOS technology; Electrodes; Flash memory; Nonvolatile memory; Phase change materials; Phase change random access memory; Read-write memory; Research and development; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2004. 24th International Conference on
Print_ISBN
0-7803-8166-1
Type
conf
DOI
10.1109/ICMEL.2004.1314648
Filename
1314648
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