Title :
High density integration of low current phase-change RAM using structural modification based on 0.18 μm-CMOS technologies
Author :
Jeong, G.T. ; Koo, H.C. ; Hwang, Y.N. ; Lee, S.H. ; Ahn, S.J. ; Lee, S.Y. ; Ryoo, K.C. ; Hong, J.S. ; Yeung, F. ; Oh, J.H. ; Kim, H.-J. ; Jeong, W.C. ; Park, J.H. ; Koh, G.H. ; Kim, Y.T. ; Jeong, H.S. ; Kinam Kim
Author_Institution :
Semicond. R&D Div., Samsung Electron. Co. Ltd., South Korea
Abstract :
PRAM is a promising memory that can solve the problems of conventional memory. Writing current reduction is the most important technical challenges in order to maximize the advantage of PRAM in scaling. We will present the high density 64Mb PRAM based on 0.18 μm CMOS technologies. And Various approaches to reduce the writing Current will be reviewed.
Keywords :
CMOS integrated circuits; concurrency theory; integrated circuit reliability; 0.18 μm-CMOS technologies; 0.18 micron; PRAM; high density integration; low current phase-change RAM; structural modification; writing current reduction; Amorphous materials; CMOS technology; Electrodes; Flash memory; Nonvolatile memory; Phase change materials; Phase change random access memory; Read-write memory; Research and development; Writing;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314648
