Title :
Electrical characterization of Niy(Si1-xGex)1-y/Si1-xGex and NiSi/Si Schottky diodes
Author :
Saha, A.R. ; Chattopadhyay, S. ; Dalapati, G.K. ; Nandi, S.K. ; Maiti, C.K.
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
Abstract :
A Schottky barrier diode has been fabricated by depositing Ni on strained-Si (grown on a graded relaxed Si1-xGex buffer layer) and characterized in the temperature range of 125K-300K for the determination of Schottky barrier height (SBH), ideality factor (n) and interface quality of the contact. The current-voltage (I-V) characteristics have been simulated using SEMICAD device simulator. To fit the experimental I-V results with the simulation, an interfacial layer and a series resistance were included in the model. The ideality factor decreases with an increase in temperature, while the barrier height increases. Transmission electron micrograph has been studied to interpret the chemical phase and morphology of the germanosilicide film.
Keywords :
Ge-Si alloys; Schottky barriers; Schottky diodes; elemental semiconductors; nickel compounds; semiconductor device models; silicon; technology CAD (electronics); transmission electron microscopy; 125 to 300 K; Niy(Si1-xGex)1-y-Si1-xGex; Niy(Si1-xGex)1-y/Si1-xGex; NiSi-Si; NiSi/Si Schottky diodes; SEMICAD device simulator; Schottky barrier height; chemical phase; current-voltage characteristics; electrical characterization; germanosilicide film; ideality factor; interface quality; interfacial layer; morphology; series resistance; transmission electron micrograph; Annealing; Buffer layers; CMOS technology; Electric variables; Schottky barriers; Schottky diodes; Silicidation; Silicon germanium; Temperature dependence; Temperature distribution;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314651
