Title :
Photoacoustic spectroscopy: investigation of sputter damage in Si surface by Ar plasma
Author :
Todorovic, D.M. ; Smiljanic, M. ; Sarajlic, M. ; Vasiljevic-Radovic, D. ; Randjelovic, D.
Author_Institution :
Center for Multidisciplinary Studies, Belgrade Univ., Serbia
Abstract :
The effect of Ar plasma etching on the surface of Si was investigated by photoacoustic spectroscopy. The surface of Si sample (p-tip, 10 kΩcm, 420 μm) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of photoacoustic signals of Si samples Ar plasma etched and incoming Si samples indicate existence of two surface energy states (the generation-recombination centers) at 0.31 and 0.99 eV.
Keywords :
elemental semiconductors; photoacoustic spectra; silicon; sputter etching; surface states; 0.31 eV; 0.75 to 1.55 eV; 0.99 eV; 10 kohmcm; 2 to 80 min; 420 micron; Ar plasma; Si; Si surface; photoacoustic spectroscopy; plasma etching; sputter damage; surface energy states; Argon; Energy measurement; Energy states; Phase measurement; Plasma applications; Plasma measurements; Signal generators; Spectroscopy; Sputter etching; Surface treatment;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314853
