Title :
Degradation of ultra-thin oxides with tungsten gates under high voltage: wear-out and breakdown transient
Author :
Palumbo, F. ; Lombardo, S. ; Stathis, J.H. ; Narayanan, Vijaykrishnan ; McFeely, F.R. ; Yurkas, J.J.
Author_Institution :
Sezione di Catania, CNR-IMM, Catania, Italy
Abstract :
An analysis of the dynamics of degradation of ultra-thin gate SiO2 films under accelerated high voltage stress, from the growth of defect concentration up to the final phase of the oxide breakdown, was performed on MOS samples with Tungsten as gate material.
Keywords :
MOSFET; dielectric thin films; electric breakdown; semiconductor device breakdown; semiconductor device reliability; silicon compounds; tungsten; tunnelling; SiO2; W gates; accelerated high voltage stress; breakdown transient; ultra-thin gate SiO2 films; ultra-thin oxides degradation; wear-out transient; Anodes; Breakdown voltage; Degradation; Hydrogen; Kinetic theory; Performance analysis; Pulse measurements; Stress; Tungsten; Tunneling;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315311
