The improvement of copper interconnect electromigration resistance by cap/dielectric interface treatment and geometrical design

Author

Lin, M.H. ; Lin, Y.L. ; Chen, J.M. ; Tsai, C.C. ; Yeh, M.-S. ; Liu, C.C. ; Hsu, Steve ; Wang, Tahui ; Sheng, Y.C. ; Chang, K.P. ; Su, K.C. ; Chang, Y.J. ; Tahui Wang

Author_Institution

United Microelectron. Corp., Hsin-Chu, Taiwan

fYear

2004

fDate

25-29 April 2004

Firstpage

229

Lastpage

233

Abstract

A significant improvement of electromigration (EM) lifetime is achieved by modification of pre-clean before cap-layer deposition and Cu cap/dielectric materials. A possible mechanism for EM lifetime enhancement was proposed. Cu-silicide formation before cap-layer deposition and adhesion of Cu/cap interface were found to be critical factors in controlling Cu electromigration reliability. Effects of geometrical layout variation and stress current direction were also investigated.

Keywords

copper; electromigration; integrated circuit design; integrated circuit interconnections; integrated circuit metallisation; Cu; Cu interconnect electromigration resistance; Cu-silicide formation; adhesion; cap-layer deposition; cap/dielectric interface treatment; geometrical design; geometrical layout variation; stress current direction; Adhesives; Conducting materials; Copper; Dielectric materials; Electromigration; Electrons; Integrated circuit interconnections; Stress; Temperature distribution; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International

Print_ISBN

0-7803-8315-X

Type

conf

DOI

10.1109/RELPHY.2004.1315328

Filename

1315328