Title :
The improvement of copper interconnect electromigration resistance by cap/dielectric interface treatment and geometrical design
Author :
Lin, M.H. ; Lin, Y.L. ; Chen, J.M. ; Tsai, C.C. ; Yeh, M.-S. ; Liu, C.C. ; Hsu, Steve ; Wang, Tahui ; Sheng, Y.C. ; Chang, K.P. ; Su, K.C. ; Chang, Y.J. ; Tahui Wang
Author_Institution :
United Microelectron. Corp., Hsin-Chu, Taiwan
Abstract :
A significant improvement of electromigration (EM) lifetime is achieved by modification of pre-clean before cap-layer deposition and Cu cap/dielectric materials. A possible mechanism for EM lifetime enhancement was proposed. Cu-silicide formation before cap-layer deposition and adhesion of Cu/cap interface were found to be critical factors in controlling Cu electromigration reliability. Effects of geometrical layout variation and stress current direction were also investigated.
Keywords :
copper; electromigration; integrated circuit design; integrated circuit interconnections; integrated circuit metallisation; Cu; Cu interconnect electromigration resistance; Cu-silicide formation; adhesion; cap-layer deposition; cap/dielectric interface treatment; geometrical design; geometrical layout variation; stress current direction; Adhesives; Conducting materials; Copper; Dielectric materials; Electromigration; Electrons; Integrated circuit interconnections; Stress; Temperature distribution; Testing;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315328
