Thermal Laser Stimulation of active devices in silicon - a quantitative FET parameter investigation

Thermal Laser Stimulation (TLS) can localize also silicon device anomalies using free carrier absorption in heavily doped areas. We present frontside and backside results on the quantitative influence of TLS on FET parameters. We show how the FET output curve shifts as function of laser power and scanning speed. This work investigates the quantitative influence of frontside and backside TLS on FET device parameters. The influence of temperature on device characteristics has been investigated in detail and used as standard. As a result, the TLS temperature shift can be calculated and the correlating device parameters can be obtained. Based on this study, the detectability of defects with TLS or SDL can be estimated much more accurate.