DocumentCode
415654
Title
Gold dendrite simulation and growth kinetics
Author
Kersey, J.L., Jr. ; Blish, Richard C., II
Author_Institution
Adv. Micro Devices Inc., Sunnyvale, CA, USA
fYear
2004
fDate
25-29 April 2004
Firstpage
615
Lastpage
616
Abstract
While dendritic growth for Ag, Sn and other metals provides jeopardy for packaged integrated circuits, we observed Au dendrites inside ceramic packages. The key factors controlling growth kinetics are a combination of bias and two residual chemicals: one hygroscopic component from the die attach material, and gold plating salts. We found dendritic growth rate to be linear with plating salt concentration during laboratory simulations, but were unable to measure the current density dependence. However, the key factor was presence or absence of residual nonylphenol, tracked down to an inadequate die attach cure schedule. Laboratory simulations produced the same dendrite morphology as seen for failed units. Furthermore, we found dendritic growth would occur ONLY if all three factors were present - bias and the two chemicals.
Keywords
ceramic packaging; dendrites; gold; microassembling; semiconductor device packaging; semiconductor device reliability; silver; tin; Ag; Au; Au dendrite simulation; Sn; current density dependence; die attach material; gold plating salts; growth kinetics; hygroscopic component; inside ceramic packages; laboratory simulations; packaged integrated circuits; Ceramics; Chemicals; Circuit simulation; Density measurement; Gold; Integrated circuit packaging; Kinetic theory; Laboratories; Microassembly; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN
0-7803-8315-X
Type
conf
DOI
10.1109/RELPHY.2004.1315416
Filename
1315416
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