• DocumentCode
    415654
  • Title

    Gold dendrite simulation and growth kinetics

  • Author

    Kersey, J.L., Jr. ; Blish, Richard C., II

  • Author_Institution
    Adv. Micro Devices Inc., Sunnyvale, CA, USA
  • fYear
    2004
  • fDate
    25-29 April 2004
  • Firstpage
    615
  • Lastpage
    616
  • Abstract
    While dendritic growth for Ag, Sn and other metals provides jeopardy for packaged integrated circuits, we observed Au dendrites inside ceramic packages. The key factors controlling growth kinetics are a combination of bias and two residual chemicals: one hygroscopic component from the die attach material, and gold plating salts. We found dendritic growth rate to be linear with plating salt concentration during laboratory simulations, but were unable to measure the current density dependence. However, the key factor was presence or absence of residual nonylphenol, tracked down to an inadequate die attach cure schedule. Laboratory simulations produced the same dendrite morphology as seen for failed units. Furthermore, we found dendritic growth would occur ONLY if all three factors were present - bias and the two chemicals.
  • Keywords
    ceramic packaging; dendrites; gold; microassembling; semiconductor device packaging; semiconductor device reliability; silver; tin; Ag; Au; Au dendrite simulation; Sn; current density dependence; die attach material; gold plating salts; growth kinetics; hygroscopic component; inside ceramic packages; laboratory simulations; packaged integrated circuits; Ceramics; Chemicals; Circuit simulation; Density measurement; Gold; Integrated circuit packaging; Kinetic theory; Laboratories; Microassembly; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
  • Print_ISBN
    0-7803-8315-X
  • Type

    conf

  • DOI
    10.1109/RELPHY.2004.1315416
  • Filename
    1315416