DocumentCode :
415660
Title :
NBTI effects of pMOSFETs with different nitrogen dose implantation
Author :
Lee, Y.J. ; Tang, Y.C. ; Wu, M.H. ; Chao, T.S. ; Ho, P.T. ; Lai, David ; Yang, W.L. ; Huang, T.Y.
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2004
fDate :
25-29 April 2004
Firstpage :
681
Lastpage :
682
Abstract :
NBTI effects with different nitrogen dose implantation and regions were investigated. High nitrogen dose implantation in the channel or source/drain extension results in serious NBTI degradation. Both the dynamic NBTI effects and substrate hot holes effects were also discussed. DNBTI and ICP were measured simultaneously. Reduction of ΔVTH and ICP after positive gate bias stressing is related with the recovery of interface states.
Keywords :
MOSFET; interface states; interface structure; ion implantation; nitrogen; semiconductor device breakdown; semiconductor device reliability; semiconductor doping; N dose implantation; NBTI effects; interface states; pMOSFETs; positive gate bias stressing; source/drain extension; substrate hot holes; Boron; Degradation; Hot carriers; Implants; Interface states; MOSFETs; Niobium compounds; Nitrogen; Stress; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
Type :
conf
DOI :
10.1109/RELPHY.2004.1315449
Filename :
1315449
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=415660
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