DocumentCode :
415662
Title :
Localized transient charging and it´s implication on the hot carrier reliability of HfSiON MOSFETs
Author :
Lee, B.H. ; Sim, J.H. ; Choi, Rino ; Bersuker, G. ; Matthew, K. ; Moumen, N. ; Peterson, J.J. ; Larson, L.
fYear :
2004
fDate :
25-29 April 2004
Firstpage :
691
Lastpage :
692
Abstract :
Hot carrier reliability of poly-gated and TiN-gated MOSFETs with HfSiON gate dielectric is studied. For short channel devices, worse degradation of HfSiON occurs at Vg=Vd while oxide devices are degraded more at Vg=Vd/2 similar to oxide control devices. Localized transient charging at the drain comer of the HfSiON layer is proposed to explain the channel length dependence and time dependent relaxation of HC reliability characteristics.
Keywords :
MOSFET; dielectric thin films; electric breakdown; hafnium compounds; semiconductor device breakdown; semiconductor device reliability; titanium compounds; HfSiON; HfSiON MOSFETs; TiN; TiN-gated; channel length dependence; degradation; drain corner; hot carrier reliability; localized transient charging; poly-gated MOSFETs; short channel devices; time dependent relaxation; Degradation; Fabrication; Hafnium; High K dielectric materials; High-K gate dielectrics; Hot carriers; Impact ionization; MOSFETs; Stress; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
Type :
conf
DOI :
10.1109/RELPHY.2004.1315454
Filename :
1315454
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=415662
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