• DocumentCode
    415899
  • Title

    Device and package level thermal modeling of GaAs Power Amplifiers

  • Author

    Vijayakumar, Bhuvaneshwaran ; Burton, Richard ; Guo, Yifan

  • Author_Institution
    Skyworks Solutions Inc.,, Irvine, CA, USA
  • fYear
    2004
  • fDate
    1-4 June 2004
  • Firstpage
    291
  • Abstract
    In this paper an accurate finite element modeling methodology for Gallium Arsenide (GaAs) Power Amplifier (PA) modules is presented. A device level finite element model is developed to simulate the thermal performance of a single HBT device accurately. This model can be used to evaluate the effects of different device parameters on thermal performance. The effect of metallization thickness on a device is presented with excellent measurement correlation. This model is also utilized as a super element used in package level simulations. Two different power amplifier designs, one on a Metal Lead Frame (MLF) package and another on a 4×4 mm Multi Chip Module (MCM) package are used as examples to illustrate the package level simulations. The simulation results for these two packages show good agreement with the experimental measurements.
  • Keywords
    III-V semiconductors; finite element analysis; gallium arsenide; heterojunction bipolar transistors; multichip modules; power amplifiers; semiconductor device models; semiconductor device packaging; thermal management (packaging); GaAs; GaAs power amplifier modules; HBT device; MCM package; device parameter; finite element modeling; metal lead frame package; metallization thickness; multi chip module package; package level simulation; package level thermal modeling; power amplifier design; super element; thermal performance; Finite element methods; Gallium arsenide; Heterojunction bipolar transistors; Lead; Packaging; Power amplifiers; Predictive models; Temperature; Thermal conductivity; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermal and Thermomechanical Phenomena in Electronic Systems, 2004. ITHERM '04. The Ninth Intersociety Conference on
  • Print_ISBN
    0-7803-8357-5
  • Type

    conf

  • DOI
    10.1109/ITHERM.2004.1319187
  • Filename
    1319187