• DocumentCode
    415975
  • Title

    G-helix: lithography-based wafer-level compliant chip-to-substrate interconnects

  • Author

    Lo, George ; Sitaraman, Suresh K.

  • Author_Institution
    Comput. Aided Simulation of Packaging Reliability Lab., Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    1
  • fYear
    2004
  • fDate
    1-4 June 2004
  • Firstpage
    320
  • Abstract
    In this work, the fabrication and the reliability of 100 μm pitch compliant off-chip G-helix interconnects are presented. A three-mask process was used to successfully fabricate the free-standing compliant interconnect at a pitch of 100 μm. The geometry of the interconnect was optimized for mechanical and electrical performance. Also, a thermo-mechanical reliability simulation was performed. It was seen from the simulations that the G-helix interconnect assembly on an organic substrate, without the use of an underfill, could last more than 1000 thermal cycles.
  • Keywords
    electroplating; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; lithography; thermal stresses; 100 micron; chip-to-substrate interconnects; electroplated structure; free-standing compliant interconnect; lithography-based interconnects; microelectronic packaging; off-chip G-helix interconnects; organic substrate; thermal cycling; thermo-mechanical reliability; wafer-level pitch compliant interconnects; Circuit simulation; Electric resistance; Fabrication; Integrated circuit interconnections; Integrated circuit reliability; Integrated circuit technology; Microelectronics; Packaging; Substrates; Thermomechanical processes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 2004. Proceedings. 54th
  • Print_ISBN
    0-7803-8365-6
  • Type

    conf

  • DOI
    10.1109/ECTC.2004.1319358
  • Filename
    1319358