Development of high-k embedded capacitors on printed wiring board using sol-gel and foil-transfer processes

Author

Abothu, Isaac Robin ; Raj, P. Markondeya ; Balaraman, Devarajan ; Govind, Vinu ; Bhattacharya, Swapan ; Sacks, Michael D. ; Swaminathan, M. ; Lance, Michael J. ; Tummala, Rao R.

Author_Institution

Packaging Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

Volume

1

fYear

2004

fDate

1-4 June 2004

Firstpage

514

Abstract

Sol-gel ceramic films were fabricated for organic system-on-package compatible integral capacitor applications. The films were synthesized on Ti and Ni foils which were then transferred onto organic boards using a lamination step. SrTiO₃ and BaTiO₃ films were synthesized with capacitance as high as 700 nF/cm² and loss as low as 0.005. It should be noted that the high permeability of Ni (approximately 100 in bulk form) and lower conductivity compared to copper decreases the skin depth and increases the resistivity of copper. This can have a deleterious effect on Q. More studies are underway to investigate this effect.

Keywords

barium compounds; ceramic capacitors; dielectric thin films; foils; laminates; nickel; permittivity; printed circuit manufacture; sol-gel processing; strontium compounds; titanium; BaTiO₃-Ni; BaTiO₃-Ti; Q-factor; SrTiO₃-Ni; SrTiO₃-Ti; capacitance; conductivity; foil-transfer processes; high-k embedded capacitors; lamination process; metallic foils; organic system-on-package compatible integral capacitor; permeability; printed wiring board; resistivity; sol-gel ceramic films; sol-gel processes; Capacitance; Capacitors; Ceramics; Conductivity; Copper; High K dielectric materials; High-K gate dielectrics; Lamination; Permeability; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 2004. Proceedings. 54th

Print_ISBN

0-7803-8365-6

Type

conf

DOI

10.1109/ECTC.2004.1319387

Filename

1319387