DocumentCode :
416000
Title :
Development of high-k embedded capacitors on printed wiring board using sol-gel and foil-transfer processes
Author :
Abothu, Isaac Robin ; Raj, P. Markondeya ; Balaraman, Devarajan ; Govind, Vinu ; Bhattacharya, Swapan ; Sacks, Michael D. ; Swaminathan, M. ; Lance, Michael J. ; Tummala, Rao R.
Author_Institution :
Packaging Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
1
fYear :
2004
fDate :
1-4 June 2004
Firstpage :
514
Abstract :
Sol-gel ceramic films were fabricated for organic system-on-package compatible integral capacitor applications. The films were synthesized on Ti and Ni foils which were then transferred onto organic boards using a lamination step. SrTiO3 and BaTiO3 films were synthesized with capacitance as high as 700 nF/cm2 and loss as low as 0.005. It should be noted that the high permeability of Ni (approximately 100 in bulk form) and lower conductivity compared to copper decreases the skin depth and increases the resistivity of copper. This can have a deleterious effect on Q. More studies are underway to investigate this effect.
Keywords :
barium compounds; ceramic capacitors; dielectric thin films; foils; laminates; nickel; permittivity; printed circuit manufacture; sol-gel processing; strontium compounds; titanium; BaTiO3-Ni; BaTiO3-Ti; Q-factor; SrTiO3-Ni; SrTiO3-Ti; capacitance; conductivity; foil-transfer processes; high-k embedded capacitors; lamination process; metallic foils; organic system-on-package compatible integral capacitor; permeability; printed wiring board; resistivity; sol-gel ceramic films; sol-gel processes; Capacitance; Capacitors; Ceramics; Conductivity; Copper; High K dielectric materials; High-K gate dielectrics; Lamination; Permeability; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2004. Proceedings. 54th
Print_ISBN :
0-7803-8365-6
Type :
conf
DOI :
10.1109/ECTC.2004.1319387
Filename :
1319387
Link To Document :
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