Development of low-k interlayer dielectric film for embedded passives and actives integral substrates

We have developed a novel thermosetting resin that has a low elastic modulus, low dielectric constant and low dielectric loss. Using this material, we have developed an interlayer dielectric film that could be used for embedded passives and actives integral substrates. We have studied the properties of embedded devices, interlayer connection methods and substrate reliability. Our results indicate that it is possible to embed devices using low temperature and low pressure (150°C, 0.1 MPa) with no voids. In this paper, the physical and embedding properties of the interlayer dielectric film we have developed, interlayer connecting method and substrate reliability are discussed. In addition, we propose a simple manufacturing process for embedded passives and actives integral substrates using the interlayer dielectric film.