Coupling of simultaneous switching noise to interconnecting lines in high-speed systems

Author

Kim, Jingook ; Rotaru, Mihai Dragos ; Chong, Kok Chin ; Park, Jongbae ; Iyer, Mahadevan K. ; Kim, Joungho

Author_Institution

Dept of Electr. Eng. & Comput. Sci., KAIST, Daejon, South Korea

Volume

1

fYear

2004

fDate

1-4 June 2004

Firstpage

568

Abstract

An analytical model of the coupling mechanism between the switching noises to signal traces has been successfully derived. The coupling mechanism was been rigorously analyzed and clarified. The analytical model was verified up to 10 GHz by comparison with measured results and simulated results using a full wave simulator (HFSS). It has also been successfully applied to applications like the current memory modules (SDRAM DDR module).

Keywords

DRAM chips; SRAM chips; high-speed integrated circuits; integrated circuit interconnections; integrated circuit modelling; integrated circuit noise; integrated circuit packaging; 10 GHz; HFSS full wave simulator; SDRAM DDR module; analytical coupling model; coupling mechanism; high-speed systems; interconnecting lines; memory modules; signal traces; simultaneous switching noise coupling; Analytical models; Circuit noise; Coupling circuits; Electromagnetic fields; Electromagnetic interference; Integrated circuit interconnections; Noise generators; Signal analysis; Signal generators; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 2004. Proceedings. 54th

Print_ISBN

0-7803-8365-6

Type

conf

DOI

10.1109/ECTC.2004.1319395

Filename

1319395