Flip-chip based 3-D high-Q integrated inductors

Author

Gong, Jing-Feng ; Chan, Philip C.H.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

Volume

1

fYear

2004

fDate

1-4 June 2004

Firstpage

1095

Abstract

Solenoid type inductors have been realized using electroplating and flip chip packaging technology. The inductors were embedded in the package and are more reliable than the inductors built by MEMS techniques. The electromagnetic simulations have been performed to predict the inductors performances. The fabricated inductors achieved inductance ranging from 1nH to 2.5nH. The maximum Q factor is well above 15 even when the lossy silicon is at the both sides of the inductor.

Keywords

Q-factor; S-parameters; computational electromagnetics; electroplating; flip-chip devices; inductance; inductors; radiofrequency integrated circuits; reflow soldering; solenoids; 3-D high-Q integrated inductors; S-parameters; design parameters; electromagnetic simulations; electroplating; flip chip packaging; inductances; maximum Q factor; ohmic loss; parasitic capacitors; reflow; solder-bumped inductor; solenoid type inductors; Electromagnetic induction; Flip chip; Inductance; Inductors; Micromechanical devices; Packaging; Predictive models; Q factor; Silicon; Solenoids;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 2004. Proceedings. 54th

Print_ISBN

0-7803-8365-6

Type

conf

DOI

10.1109/ECTC.2004.1319476

Filename

1319476