DocumentCode :
416132
Title :
Wafer level interconnects for 3D packaging
Author :
Banerjee, S.R. ; Drayton, Rhonda Franklin
Author_Institution :
Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA
Volume :
2
fYear :
2004
fDate :
1-4 June 2004
Firstpage :
1513
Abstract :
A hybrid electrical package is compared to monolithic designs to isolate the effects of wirebond parasitics and modularity. The monolithic designs produce 3.2 dB of insertion loss at 50 GHz, which indicates minimal loss due to wirebonds. The hybrid design insertion loss is within 0.5 dB of the reference case up to 40 GHz. The response is oscillatory above this frequency due to complex substrate transitions. Quasi-static modeling techniques are also used to model the wirebond effects with standard CAD tools.
Keywords :
circuit CAD; hybrid integrated circuits; integrated circuit design; integrated circuit interconnections; integrated circuit measurement; integrated circuit modelling; integrated circuit packaging; lead bonding; losses; 3.2 dB; 3D packaging; 40 GHz; 50 GHz; CAD tools; hybrid design insertion loss; hybrid electrical package; insertion loss; modularity; monolithic designs; oscillatory response; quasi-static modeling techniques; substrate transitions; wafer level interconnects; wirebond effects model; wirebond loss; wirebond parasitics; Frequency; Insertion loss; Integrated circuit interconnections; Integrated circuit packaging; Integrated circuit synthesis; Integrated circuit technology; Isolation technology; Microstrip; Signal design; Wafer scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2004. Proceedings. 54th
Print_ISBN :
0-7803-8365-6
Type :
conf
DOI :
10.1109/ECTC.2004.1320315
Filename :
1320315
Link To Document :
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