Title :
A 400-MHz fourth-order bandpass sigma-delta modulator in SiGe technology
Author :
Loi, Changfeng ; Xu, Yong Ping
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
fDate :
31 May-2 June 2004
Abstract :
This work describes the design of a 400-MHz fourth-order continuous-time sigma-delta modulator for narrow band signal digitization. The sigma-delta modulator is realized using a multi-feedback structure with one-bit quantizer and non-return-zero DACs. The loop filters are implemented with Gm-C-Opamp integrators in a biquad configuration. The design is based on a SiGe BiCMOS process technology with a maximum fT of 35 GHz. When sampled at 1.6 GHz, the modulator achieves a maximum SNR of 66 dB at post-layout level for a 200-kHz signal bandwidth. The total power dissipation of the modulator is 145 mW under a 3-V supply.
Keywords :
BiCMOS integrated circuits; UHF integrated circuits; band-pass filters; feedback; germanium; modulators; operational amplifiers; sigma-delta modulation; silicon; 1.6 GHz; 145 mW; 200 kHz; 3 V; 35 GHz; 400 MHz; 66 dB; Gm-C-opamp integrator; IF digitization; SiGe; analog-to-digital converter; bipolar integrated circuit; continuous-time sigma-delta modulator; fourth-order bandpass sigma-delta modulator; loop filter; multifeedback structure; narrow band digitization; narrow band signal digitization; Band pass filters; Bandwidth; BiCMOS integrated circuits; Delta-sigma modulation; Digital modulation; Germanium silicon alloys; Narrowband; Power dissipation; Signal design; Silicon germanium;
Conference_Titel :
Emerging Technologies: Frontiers of Mobile and Wireless Communication, 2004. Proceedings of the IEEE 6th Circuits and Systems Symposium on
Print_ISBN :
0-7803-7938-1
DOI :
10.1109/CASSET.2004.1322967
