DocumentCode
416722
Title
Evaluation of a specimen heating method for the development of a new temperature measuring method for semiconductor manufacturing equipments
Author
Yamazawa, K. ; Arai, M. ; Shibata, Satoshi ; Izutani, H. ; Morita, T.
Author_Institution
Nat. Metrology Inst. of Japan, National Inst. of Adv. Industrial Sci. & Technol., Ibaraki, Japan
Volume
3
fYear
2003
fDate
4-6 Aug. 2003
Firstpage
2603
Abstract
Matsushita Electric Industrial Co., Ltd. and Sumitomo Eaton Nova Corporation are developing a new method to measure the temperature distribution on the wafer surface during a rapid thermal process (RTP). This method focuses on the relation between the reordering rates of the amorphous layer caused by ion implanting and the process temperature. This paper discusses the heating method for the evaluation of this relationship.
Keywords
amorphous semiconductors; ion implantation; process heating; resistance thermometers; semiconductor device manufacture; silicon; temperature measurement; temperature scales; amorphous silicon; ion implanting; platinum resistance thermometer; rapid thermal process; semiconductor manufacturing equipments; specimen heating method evaluation; temperature measuring method; temperature scale; thermometry; wafer surface;
fLanguage
English
Publisher
ieee
Conference_Titel
SICE 2003 Annual Conference
Conference_Location
Fukui, Japan
Print_ISBN
0-7803-8352-4
Type
conf
Filename
1323659
Link To Document