Title :
Evaluation of a specimen heating method for the development of a new temperature measuring method for semiconductor manufacturing equipments
Author :
Yamazawa, K. ; Arai, M. ; Shibata, Satoshi ; Izutani, H. ; Morita, T.
Author_Institution :
Nat. Metrology Inst. of Japan, National Inst. of Adv. Industrial Sci. & Technol., Ibaraki, Japan
Abstract :
Matsushita Electric Industrial Co., Ltd. and Sumitomo Eaton Nova Corporation are developing a new method to measure the temperature distribution on the wafer surface during a rapid thermal process (RTP). This method focuses on the relation between the reordering rates of the amorphous layer caused by ion implanting and the process temperature. This paper discusses the heating method for the evaluation of this relationship.
Keywords :
amorphous semiconductors; ion implantation; process heating; resistance thermometers; semiconductor device manufacture; silicon; temperature measurement; temperature scales; amorphous silicon; ion implanting; platinum resistance thermometer; rapid thermal process; semiconductor manufacturing equipments; specimen heating method evaluation; temperature measuring method; temperature scale; thermometry; wafer surface;
Conference_Titel :
SICE 2003 Annual Conference
Conference_Location :
Fukui, Japan
Print_ISBN :
0-7803-8352-4
