DocumentCode :
417083
Title :
Emissivity measurement of silicon semiconductor wafer near room temperature
Author :
Sugawara, Hiroshi ; Ohkubo, Tomohiro ; Fukushima, Tadakazu ; Iuchi, Tohru
Author_Institution :
Toyo Univ., Kawagoe, Japan
Volume :
2
fYear :
2003
fDate :
4-6 Aug. 2003
Firstpage :
2201
Abstract :
Emissivity behaviors of a silicon semiconductor wafer near room temperature have been measured and considered from the view point of spectral, directional and polarized properties. The silicon wafer near room temperature is semitransparent at a wavelength more than 1.1 /spl mu/m, which makes emissivity behaviors complicated. Modeling of emissivities is proposed and compared with experimental results.
Keywords :
elemental semiconductors; emissivity; light polarisation; semiconductor thin films; silicon; spectral methods of temperature measurement; thermal variables measurement; 293 to 298 K; emissivity measurement; emissivity modeling; polarisation; room temperature; silicon semiconductor wafer; spectral properties;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SICE 2003 Annual Conference
Conference_Location :
Fukui, Japan
Print_ISBN :
0-7803-8352-4
Type :
conf
Filename :
1324326
Link To Document :
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