• DocumentCode
    41794
  • Title

    2015 Special Issue of IEEE Transactions on Nuclear Science Modeling and Simulation of Radiation Effects Editor Comments

  • Author

    Fleetwood, Dan ; Brown, Dennis ; Girard, Sylvain ; Gouker, Pascale ; Gerardin, Simone ; Quinn, Heather ; Barnaby, Hugh

  • Author_Institution
    Vanderbilt University,
  • Volume
    62
  • Issue
    4
  • fYear
    2015
  • fDate
    Aug. 2015
  • Firstpage
    1439
  • Lastpage
    1439
  • Abstract
    The papers in this special issue review and/or extend the state of the art in modeling and simulation of radiation effects on microelectronics. Papers in the issue cover a broad range of topics, including single event effects, total ionizing dose effects, displacement damage effects, defects in microelectronic devices, and electromagnetic pulse effects.
  • Keywords
    Analytical models; Microelectronics; Nuclear power generation; Object recognition; Predictive models; Radiation effects; Special issues and sections;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2015.2462231
  • Filename
    7203240
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=41794