Title :
A 12.5 GHz RF matrix amplifier in 180nm SOI CMOS
Author :
Park, Jinho ; Allstot, David J.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
Abstract :
The design and implementation of an RF broadband amplifier in 180nm SOI CMOS is described. Using a parasitic-aware design and optimization methodology based on particle swarm optimization techniques, the RF matrix amplifier achieves a 15.1 dB forward gain (S21) over a 12.5GHz bandwidth. It dissipates 233mW.
Keywords :
CMOS integrated circuits; circuit optimisation; distributed amplifiers; microwave amplifiers; silicon-on-insulator; 12.5 GHz; 15.1 dB; 180 nm; 233 mW; RF broadband amplifier; RF integrated circuits; RF matrix amplifier; SOI CMOS; distributed amplifier; optimization methodology; parasitic-aware design; particle swarm optimization; travelling wave amplifiers; Bandwidth; Broadband amplifiers; CMOS technology; Distributed amplifiers; Optical amplifiers; Particle swarm optimization; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers; Transmission line matrix methods;
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
DOI :
10.1109/ISCAS.2004.1328145
