Fitting of 2-dimensional polynomial device model based on simulated voltage and current spectra

Author

Aikio, Janne ; Rahkonen, Timo

Author_Institution

Dept. of Electr. & Inf. Eng., Oulu Univ., Finland

Volume

4

fYear

2004

fDate

23-26 May 2004

Abstract

This paper presents a fitting technique for polynomial 2-dimensional nonlinearity, based on voltage current spectra. It will be shown that despite the strongly correlating controlling voltages, the nonlinear 2-dimensional drain-source current (I_DS) of the 30 W RF power transistor model can be fitted. Furthermore, a simplified Volterra presentation of the 3rd order intermodulation distortion (IM3) contributors of I-V and Q-V sources can be constructed. The results match well with the data simulated using harmonic balance. Also IM3 phasors of the input and output of the device are presented. The analysis shows that the total output IM3 current is dominated by the distortion from I_DS. Also a significant portion of the IM3 current is caused by the fact that output IM3 voltage appears across linear but large drain-source capacitance (C_DS).

Keywords

Volterra series; harmonic distortion; intermodulation distortion; microwave power transistors; polynomials; power MOSFET; 30 W; 3rd order intermodulation distortion; I-V sources; IM3 current; IM3 phasors; IM3 voltage; Q-V sources; RF power transistor model; Volterra series; drain-source capacitance; harmonic balance; nonlinear two dimensional drain-source current; polynomial tow dimensional nonlinearity; simulated voltage current spectra; two dimensional polynomial device model; voltage current spectra; Capacitance; Circuit testing; Current measurement; Distortion measurement; Equations; Intrusion detection; Laboratories; Polynomials; Voltage control; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on

Print_ISBN

0-7803-8251-X

Type

conf

DOI

10.1109/ISCAS.2004.1329086

Filename

1329086