DocumentCode
418521
Title
Static divided word matching line for low-power Content Addressable Memory design
Author
Cheng, Kuo-Hsing ; Wei, Chia-Hung ; Jiang, Shu-Yu
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan
Volume
2
fYear
2004
fDate
23-26 May 2004
Abstract
In this paper, a novel Content Addressable Memory (CAM) word structure with divided word matching line for low-power application is proposed. To reduce the comparison power consumption, the proposed CAM word structure adopts static circuit design to improve the overall system reliability and reduce the power consumption. In addition, a new CAM cell with single bit line circuit design is proposed. The single bit line design requires only one heavy loading bit line, and prevents the frequently switching that designed in conventional basic CAM cell. Based on TSMC 0.25 μm CMOS process with 2.5 V supply voltage, a 128 words by 32 bits CAM is designed. The simulation result shows that the power consumption of the proposed CAM is 17.12 mW under 300 MHz operation frequency.
Keywords
CMOS memory circuits; circuit switching; integrated circuit design; integrated circuit reliability; low-power electronics; power consumption; 0.25 micron; 17.12 mW; 2.5 V; 300 MHz; CMOS process; TSMC; low-power content addressable memory design; power consumption; reliability; simulation; single bit line circuit design; static circuit design; static divided word matching line; switching; Associative memory; CADCAM; CMOS process; Circuit simulation; Circuit synthesis; Computer aided manufacturing; Energy consumption; Frequency; Reliability; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN
0-7803-8251-X
Type
conf
DOI
10.1109/ISCAS.2004.1329350
Filename
1329350
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