DocumentCode :
418524
Title :
High input range sense comparator for multilevel Flash memories
Author :
Cabrini, A. ; Micheloni, R. ; Khouri, O. ; Gregori, S. ; Torelli, G.
Author_Institution :
Dept. of Electron., Pavia Univ., Italy
Volume :
2
fYear :
2004
fDate :
23-26 May 2004
Abstract :
This paper presents the experimental evaluation of a fully-differential offset-compensated voltage comparator designed for use in multilevel (ML) Flash memory sensing. The comparator is made up by an input buffering stage followed by a gain stage that performs a regenerative action. The input stage, which must provide high input common mode range, is powered by a high-voltage supply VPP, while the gain stage is operated from the standard supply VDD, thus limiting current drawing from VPP. The circuit has been integrated in a 0.13-μm triple-well Flash CMOS process. The experimental evaluation showed an overall comparison time of 35 ns with an input signal of 10 mV and a current consumption of 15 μA from VPP. These results make the proposed solution well suited for ML sensing.
Keywords :
CMOS logic circuits; buffer storage; comparators (circuits); flash memories; integrated circuit design; multivalued logic; network topology; 0.13 micron; 10 V; 15 muA; 35 ns; current consumption; fully-differential offset-compensated voltage comparator design; gain stage; high-voltage supply; input buffering stage; multilevel Flash memory sensing; triple-well Flash CMOS process; Analog-digital conversion; CMOS process; Circuits; Digital cameras; Fabrication; Flash memory; Microelectronics; Performance gain; Threshold voltage; Topology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
Type :
conf
DOI :
10.1109/ISCAS.2004.1329357
Filename :
1329357
Link To Document :
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