A symmetric and thermally de-embedded nonlinear FET model for wireless and microwave applications

This paper describes the development of a new large-signal nonlinear FET model. The raison d´etre for this model is the design of modern wireless RFICs which places new demands on the predictions of linearity and efficiency of the circuit. The model is a hybrid, comprising an advanced development of the Chalmers University (a.k.a. ´Angelov´) (Angelov et al., 1992) drain current model to include dynamic electro-thermal behavior, and a table-based HPFET (Root et al., 1991) 2-dimensional gate current and charge model. Both components are enhanced to include symmetry, even though the model is extracted from measurements made only on the half-space V_ds ≥ 0. The model has been validated in class B amplifier, power amplifier and mixer RFIC applications.