Title :
Large-signal HBT model requirements to predict nonlinear behaviour
Author :
Rudolph, M. ; Doerner, R.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany
Abstract :
Measurements and simulations are carried out in order to determine the requirements for a HBT model to predict the generation of harmonics. Unlike, investigations based on Volterra series, also the case of large excitations is investigated, where the load-line reaches through wide ranges of currents and voltages, and self-biasing effects take place. It turns out that in class A operation, it is absolutely necessary for the model to account for the current dependence of the base collector capacitance and collector transit time, even in a set-up where fundamental power and bias points are predicted well also without.
Keywords :
equivalent circuits; harmonic generation; heterojunction bipolar transistors; nonlinear distortion; semiconductor device models; Volterra series; base collector capacitance; bias points; collector transit time; equivalent circuit; harmonics generation; heterojunction bipolar transistor; large-signal HBT model; load-line; nonlinear behaviour predictions; nonlinear distortion; self-biasing effects; semiconductor device modeling; Bipolar transistors; Capacitance; Electronic mail; Equivalent circuits; Heterojunction bipolar transistors; Lakes; Predictive models; Semiconductor device modeling; Solid modeling; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1335793
