• DocumentCode
    420069
  • Title

    Large-signal HBT model requirements to predict nonlinear behaviour

  • Author

    Rudolph, M. ; Doerner, R.

  • Author_Institution
    Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany
  • Volume
    1
  • fYear
    2004
  • fDate
    6-11 June 2004
  • Firstpage
    43
  • Abstract
    Measurements and simulations are carried out in order to determine the requirements for a HBT model to predict the generation of harmonics. Unlike, investigations based on Volterra series, also the case of large excitations is investigated, where the load-line reaches through wide ranges of currents and voltages, and self-biasing effects take place. It turns out that in class A operation, it is absolutely necessary for the model to account for the current dependence of the base collector capacitance and collector transit time, even in a set-up where fundamental power and bias points are predicted well also without.
  • Keywords
    equivalent circuits; harmonic generation; heterojunction bipolar transistors; nonlinear distortion; semiconductor device models; Volterra series; base collector capacitance; bias points; collector transit time; equivalent circuit; harmonics generation; heterojunction bipolar transistor; large-signal HBT model; load-line; nonlinear behaviour predictions; nonlinear distortion; self-biasing effects; semiconductor device modeling; Bipolar transistors; Capacitance; Electronic mail; Equivalent circuits; Heterojunction bipolar transistors; Lakes; Predictive models; Semiconductor device modeling; Solid modeling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2004 IEEE MTT-S International
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-8331-1
  • Type

    conf

  • DOI
    10.1109/MWSYM.2004.1335793
  • Filename
    1335793