Effects of bias and load conditions on dynamic self-heating of bipolar transistors

Author

Cherepko, Sergey V. ; Hwang, James C M ; Curtice, Walter R.

Author_Institution

Lehigh Univ., Bethlehem, PA, USA

Volume

1

fYear

2004

fDate

6-11 June 2004

Firstpage

47

Abstract

Frequency dispersion due to dynamic self heating in small-signal common-emitter voltage gain of bipolar transistors was modelled and characterized. The gain was found to either increase or decrease with frequency depending on the bias and load conditions. Both distributed and lumped models could explain the observed dispersive behavior and provide reasonable fit to measured data. However, the time constants extracted by using the lumped model may not have physical significance.

Keywords

heterojunction bipolar transistors; semiconductor device models; transient analysis; bias conditions; bipolar transistors; dispersive behavior; distributed models; dynamic self-heating; electrothermal effect; frequency dispersion; heterojunction bipolar transistor; load conditions; lumped models; semiconductor device modeling; small-signal common-emitter voltage gain; transient analysis; Bipolar transistors; Circuits; Dispersion; Feedback; Frequency; Heating; Heterojunction bipolar transistors; Isothermal processes; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1335794

Filename

1335794