A DC-100 GHz frequency doubler in InP DHBT technology

Author

Puyal, V. ; Konczykowska, A. ; Nouet, P. ; Bernard, S. ; Blayac, S. ; Jorge, F. ; Riet, M. ; Godin, J.

Author_Institution

ALCATEL R & I/OPTO+, Marcoussis, France

Volume

1

fYear

2004

fDate

6-11 June 2004

Firstpage

167

Abstract

A broad-band monolithic integrated active frequency doubler operating in DC-100 GHz frequency range is presented. The circuit is fabricated in a self-aligned InP DHBT process. Circuit measurements show sinusoidal output waveform at 100 GHz with a rms time jitter of 400 fs. The doubler has a maximum conversion gain of +1 dB at 60 GHz. The fundamental suppression is better than 24 dB in the whole frequency range.

Keywords

III-V semiconductors; frequency multipliers; heterojunction bipolar transistors; indium compounds; integrated circuit design; monolithic integrated circuits; radiofrequency integrated circuits; 0 to 100 GHz; 1 dB; 400 fs; DHBT technology; Gilbert cell; InP; active splitter; circuit fabrication; circuit measurement; frequency doubler; frequency multiplier; frequency range; fundamental suppression; monolithic integrated doubler; rms time jitter; self-aligned DHBT process; sinusoidal output waveform; Circuits; DH-HEMTs; Fabrication; Frequency measurement; Gain; Heterojunctions; Indium gallium arsenide; Indium phosphide; Threshold voltage; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1335834

Filename

1335834