Si-based inductors and transformers for 30-100 GHz applications

Author

Dickson, T. ; LaCroix, M.-A. ; Boret, S. ; Gloria, D. ; Beerkens, R. ; Voinigescu, S.P.

Author_Institution

Toronto Univ., Ont., Canada

Volume

1

fYear

2004

fDate

6-11 June 2004

Firstpage

205

Abstract

Silicon planar and 3D inductors and transformers were designed and characterized on wafer up to 100 GHz. Self-resonance frequencies (SRF) beyond 100 GHz were obtained, demonstrating for the first time that spiral structures are suitable for applications such as 60-GHz WLAN or 77-GHz automotive RADAR. Minimizing area over substrate is critical to achieving high SRF. A stacked transformer is reported with S₂₁ of -2.5 dB at 50 GHz, and which offers improved performance and less area (30 μm × 30 μm) than planar transformers or microstrip couplers.

Keywords

elemental semiconductors; inductors; millimetre wave devices; resonance; semiconductor device models; silicon; transformers; 30 to 100 GHz; 3D inductors; Si; WLAN; automotive RADAR; microstrip couplers; millimeter wave; planar transformers; self-resonance frequency; silicon planar inductors; silicon-based inductors; silicon-based transformers; spiral structures; stacked inductors; stacked transformer; Automotive engineering; Couplers; Frequency; Inductors; Microstrip; Radar applications; Silicon; Spirals; Transformers; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1335845

Filename

1335845