Design and analysis of a W-band multiplier chipset

Author

Lynch, J. ; Entchev, E. ; Lyons, B. ; Tessman, A. ; Massle, H. ; Leuthe, A. ; Schlechtweg, Michael

Author_Institution

Farran Technol. Ltd., Cork, Ireland

Volume

1

fYear

2004

fDate

6-11 June 2004

Firstpage

227

Abstract

The design and analysis of a multiplier chipset with an output at W-band is presented. The MMIC designs have been fabricated on a 0.13 μm AlGaAs/InGaAs/GaAs pHEMT process. Particular emphasis has been placed on EM analysis of key components and the optimization of models suitable for use in circuit simulators based on the EM simulations. The results show a first iteration design with an on-wafer saturated output power of 20.2 dBm at 92 GHz and greater than 18 dBm over a 9% bandwidth from 87.5-95.5 GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; MMIC power amplifiers; aluminium compounds; frequency multipliers; integrated circuit design; integrated circuit modelling; millimetre wave circuits; 0.13 micron; 87.5 to 95.5 GHz; AlGaAs-InGaAs-GaAs; EM circuit analysis; EM simulation; MMIC design; MMIC frequency converters; MMIC power amplifiers; W-band multiplier chipset; circuit simulator; first iteration design; millimeter-wave circuits; on-wafer saturation; pHEMT process; Analytical models; Circuit simulation; Frequency; HEMTs; Impedance matching; MMICs; Millimeter wave technology; PHEMTs; Phase noise; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1335852

Filename

1335852