Title :
Neutrons-Induced IGBT Failure: Effects of the Number of Tested Devices on the Cross Section Calculation
Author :
Touboul, A.D. ; Foro, L.L. ; Wrobel, F. ; Guetarni, Karima ; Boch, J. ; Saigne, F.
Author_Institution :
Inst. d´Electron. du Sud, Univ. Montpellier 2, Montpellier, France
Abstract :
Despite the long-term experience of space in testing and qualifying devices, an adaptation of existing guidelines is needed for atmospheric mass applications, especially to take into account the variability of power-devices failure cross-section.
Keywords :
failure analysis; insulated gate bipolar transistors; neutron effects; power bipolar transistors; semiconductor device testing; atmospheric mass application; insulated gate bipolar transistors; neutrons-induced IGBT failure; power-devices failure cross-section; Aerospace electronics; Insulated gate bipolar transistors; Neutrons; Radiation effects; Reliability; Sensitivity; Testing; Atmospheric neutrons; IGBT; SEB; SEL; failure; ground level;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2248747
