Ultra-wideband silicon through-wafer transmission lines

Author

Kollmann, Daniel T. ; Drayton, Rhonda Franklin

Author_Institution

Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA

Volume

2

fYear

2004

fDate

6-11 June 2004

Firstpage

489

Abstract

Wideband vertical interconnects are needed for high density packaging of 3-dimensional designs in electronic and optoelectronic applications. A DC-50 GHz through-wafer transmission line based on a coplanar waveguide configuration is presented. Wideband operation is achieved by printing a CPW on the sidewall of a wet etched cavity. Simulated and measured results are given for several vertical interconnects. The best design exhibits a 0.1 dB loss per vertical interconnect at 40 GHz and a return loss greater than 19 dB from 0.45-50 GHz.

Keywords

coplanar transmission lines; coplanar waveguides; elemental semiconductors; interconnections; semiconductor thin films; silicon; transmission line theory; waveguide theory; 0.1 dB; 0.45 to 50 GHz; 3 dimensional design; CPW; Si; coplanar waveguide; electronic applications; high density packaging; optoelectronic applications; through wafer transmission lines; ultra wideband silicon; wet etched cavity; wideband vertical interconnects; Coplanar transmission lines; Coplanar waveguides; Integrated circuit interconnections; Optical losses; Packaging; Signal design; Silicon; Transmission lines; Ultra wideband technology; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1336019

Filename

1336019