Title :
Ultra-wideband silicon through-wafer transmission lines
Author :
Kollmann, Daniel T. ; Drayton, Rhonda Franklin
Author_Institution :
Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA
Abstract :
Wideband vertical interconnects are needed for high density packaging of 3-dimensional designs in electronic and optoelectronic applications. A DC-50 GHz through-wafer transmission line based on a coplanar waveguide configuration is presented. Wideband operation is achieved by printing a CPW on the sidewall of a wet etched cavity. Simulated and measured results are given for several vertical interconnects. The best design exhibits a 0.1 dB loss per vertical interconnect at 40 GHz and a return loss greater than 19 dB from 0.45-50 GHz.
Keywords :
coplanar transmission lines; coplanar waveguides; elemental semiconductors; interconnections; semiconductor thin films; silicon; transmission line theory; waveguide theory; 0.1 dB; 0.45 to 50 GHz; 3 dimensional design; CPW; Si; coplanar waveguide; electronic applications; high density packaging; optoelectronic applications; through wafer transmission lines; ultra wideband silicon; wet etched cavity; wideband vertical interconnects; Coplanar transmission lines; Coplanar waveguides; Integrated circuit interconnections; Optical losses; Packaging; Signal design; Silicon; Transmission lines; Ultra wideband technology; Wet etching;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1336019
