A low-voltage high contact force RF-MEMS switch

Author

Nishijima, Noriyo ; Hung, Juo-Jung ; Rebeiz, Gabriel M.

Author_Institution

Mech. Eng. Res. Lab., Hitachi Ltd., Tsuchiura, Japan

Volume

2

fYear

2004

fDate

6-11 June 2004

Firstpage

577

Abstract

This paper describes a novel structure for an electro-static actuated RF-MEMS metal-contact switch which achieves low-voltage actuations. Using a cantilever and placing a pull-down electrode outside the contact dimples, the actuation voltage can be reduced greatly while keeping a high contact force and restoration force. The simulation results show that the novel design operates around 20 V and produces a contact force of >200 μN per contact, and a restoration force of >115 μN per contact. The measured actuation voltage is 20-30 V which is higher than the designed value, and is thought to be caused by stress induced deflection. The measured RF isolation is 29 dB (Cu=28 fF) and the measured insertion loss is 0.2 dB (Rs=2.1 Ω) at 2 GHz.

Keywords

electrostatic actuators; microswitches; microwave switches; 0.2 dB; 2 GHz; 20 to 30 V; RF isolation; cantilever; contact force; deformation; electrostatic actuated RF-MEMS metal contact switch; low-voltage actuations; pull down electrode; restoration force; simulation; stress induced deflection; Contacts; Electrodes; Electrostatics; Energy consumption; Loss measurement; Q measurement; Radiofrequency microelectromechanical systems; Switches; Thermal force; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1336047

Filename

1336047