Title :
A novel amplifier linearization technique using an anti-parallel reconfigurable transistor (ART) pair
Author :
Yum, Tsz Yin ; Xue, Quan ; Chan, Chi Hou
Author_Institution :
Wireless Commun. Res. Center, City Univ. of Hong Kong, China
Abstract :
A new amplifier linearization methodology using an anti-parallel reconfigurable transistor (ART) pair is proposed. Unlike conventional linearization methods in which only one technique is employed, our ART method utilizes all terminals of an additional transistor and provides a unified pre-, post- and cubic-polynomial distortion technique for performance enhancement. Experimental results reveal a 42 dB reduction for the third-order intermodulation distortion (IMD3) and 15 dB for the fifth-order (IMD5) at 2.1 GHz operation band. The input 1-dB gain compression point and phase distortion have been improved effectively up to 8 dB and 15°, respectively, under a 5-V operation voltage. Meanwhile, the proposed approach demonstrates a peak power added efficiency (PAE) of 61% with 16 dB transducer gain and 21 dBm output power for a single stage low-power SiGe BJT transistor. The adjacent channel power ratio (ACPR) is maintained over -45 and -60 dBc for a W-CDMA and PHS modulated signal, respectively, under a wide range of output power.
Keywords :
Ge-Si alloys; bipolar transistors; code division multiple access; intermodulation distortion; nonlinear distortion; personal communication networks; power amplifiers; radiofrequency amplifiers; semiconductor devices; 1 to 8 dB; 15 dB; 16 dB; 2.1 GHz; 42 dB; 5 V; IMD3; IMD5; PAE; PHS modulated signal; Si-Ge; W-CDMA; adjacent channel power ratio; amplifier linearization technique; anti-parallel reconfigurable transistor method; fifth order intermodulation distortion; gain compression point; operation band; output power; personal handy-phone system; phase distortion; polynomial distortion technique; power added efficiency; power amplifier; single stage low-power SiGe BJT transistor; third-order intermodulation distortion; transducer gain; wideband code division multiple access; Gain; Germanium silicon alloys; Intermodulation distortion; Linearization techniques; Phase distortion; Power generation; Silicon germanium; Subspace constraints; Transducers; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1336081