DocumentCode
420456
Title
High voltage sensitivity GaAs planar doped barrier diodes for microwave/millimeter-wave power detector applications
Author
Vo, V.T. ; Koon, K.L. ; Hu, Z.R. ; Dharmasiri, C.N. ; Subramaniam, S.C. ; Rezazadeh, A.A.
Author_Institution
Dept. of Electr. Eng. & Electron., UMIST, UK
Volume
2
fYear
2004
fDate
6-11 June 2004
Firstpage
995
Abstract
Voltage sensitivities of planar doped barrier (PDB) detector diodes as high as 17.4 mV/μW at 10 GHz and 28.6 mV/μW at 35 GHz have been achieved. In comparison with that of existing devices, these values are three to ten times higher, implying the diodes can detect much lower power hence widening the dynamic range of microwave/millimeter-wave detectors.
Keywords
III-V semiconductors; Schottky barriers; Schottky diodes; gallium arsenide; microwave detectors; millimetre wave detectors; sensitivity; 10 GHz; 35 GHz; GaAs; GaAs planar doped barrier diodes; PDB; RF power detection; high voltage sensitivity; microwave power detector applications; millimeter wave power detector applications; sensors; Detectors; Dynamic range; Educational institutions; Gallium arsenide; Power engineering and energy; Schottky barriers; Schottky diodes; Stability; Temperature sensors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2004 IEEE MTT-S International
ISSN
0149-645X
Print_ISBN
0-7803-8331-1
Type
conf
DOI
10.1109/MWSYM.2004.1339147
Filename
1339147
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