Advanced non-linear model for accurate prediction of harmonically terminated power amplifier performance

Author

Upshur, J.I. ; White, Carl ; Bayne, M.E., Jr. ; Davis, Ben ; Walker, L. ; Reece, M.A. ; Thompson, W.L. ; Cheng, S. ; Wallis, R.E.

Author_Institution

Appl. Phys. Lab., Johns Hopkins Univ., Laurel, MD, USA

Volume

2

fYear

2004

fDate

6-11 June 2004

Firstpage

1077

Abstract

This paper presents recent advances in the state-of-the-art of neural network modeling of microwave FET devices. Enhanced accuracy of the adaptive knowledge-based neural network (AKBNN) model is shown by comparing predicted load-pull performance of the device to measurements in an automated harmonic load-pull system. Test devices are a 1.2 mm HFET measured at 2.2 GHz, and a 4.8 mm pHEMT at 8.4 GHz. Modeled versus measured comparisons include power-added efficiency and output power under fundamental frequency and second and third harmonic frequency tuning. The effectiveness of this modeling approach for the design of high-efficiency power amplifiers operating in Class-E or Class-F modes is discussed.

Keywords

circuit tuning; microwave field effect transistors; microwave power amplifiers; nonlinear network analysis; power HEMT; semiconductor device models; 1.2 mm; 2.2 GHz; 4.8 mm; 8.4 GHz; Class E modes; Class F modes; HFET; adaptive knowledge based neural network; harmonic frequency tuning; harmonically terminated power amplifier; high-efficiency power amplifiers; load-pull performance; microwave FET devices; neural network modeling; power HEMT; Adaptive systems; Frequency; HEMTs; Microwave FETs; Microwave devices; Neural networks; Power amplifiers; Power system modeling; Predictive models; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1339171

Filename

1339171