InGaP/GaAs HBT RF power amplifier with compact ESD protection circuit

Author

Ma, Yintat ; Li, G.P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Irvine, CA, USA

Volume

2

fYear

2004

fDate

6-11 June 2004

Firstpage

1173

Abstract

A 5.4-6.0 GHz InGaP/GaAs HBT power amplifier with a compact 2000 Vesd on-chip electrostatic discharge (ESD) protection circuit that has low loading capacitance of less than 0.1 pF and does not degrade RF and output power performance is presented for wireless LAN application. In contrast to the traditional diode string, a diode triggered Darlington pair is implemented as the ESD protection circuit. This summary discusses the operation principle, ESD protection performance and RF loading of the ESD protection circuit, and the power amplifier performance with this ESD protection circuit.

Keywords

III-V semiconductors; MMIC power amplifiers; electrostatic discharge; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave amplifiers; power integrated circuits; wireless LAN; 0.1 pF; 5.4 to 6 GHz; InGaP-GaAs; InGaP-GaAs HBT RF power amplifier; compact ESD protection circuit; compact electrostatic discharge protection circuit; diode triggered Darlington pair; loading capacitance; radiofrequency power amplifier; wireless LAN application; Capacitance; Circuits; Diodes; Electrostatic discharge; Gallium arsenide; Heterojunction bipolar transistors; Power amplifiers; Protection; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1339195

Filename

1339195