DocumentCode :
421180
Title :
High-speed and high-efficiency InP/InGaAs waveguide avalanche photodiodes for 40 Gbit/s transmission systems
Author :
Yasuoka, Nami ; Kuwatsuka, Haruhiko ; Kuramata, Akito
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Volume :
1
fYear :
2004
fDate :
23-27 Feb. 2004
Firstpage :
518
Abstract :
InP/InGaAs waveguide avalanche photodiodes for 40 Gbit/s are demonstrated for the first time. The highest sensitivity of -19.0 dBm is achieved at BER of 10/sup -12/ in 40 Gbit/s PRBS 2/sup 31/- 1 NRZ signal.
Keywords :
III-V semiconductors; avalanche photodiodes; error statistics; gallium arsenide; indium compounds; optical modulation; optical receivers; photodetectors; random sequences; 40 Gbit/s; BER; InP-InGaAs; InP/InGaAs waveguide avalanche photodiodes; NRZ signal; PRBS; bit error rate; nonreturn-to-zero; pseudo-random-bit-stream;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication Conference, 2004. OFC 2004
Conference_Location :
Los Angeles, CA, USA
Print_ISBN :
1-55752-772-5
Type :
conf
Filename :
1359562
Link To Document :
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