Usability comparison of scalar and vectorial optical approaches to simulation of a 1.3 μm InGaAsN VCSEL operation

Comparison of the scalar effective frequency method (EFM) and vectorial method of lines (MoL) for a 1.3 μm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser (VCSEL) has been performed. The fundamental modes yielded by both methods exhibit the satisfactory accuracy. Higher order modes suffer from the diffraction losses and reveal non-plane wave shape. Both effects are not included in the scalar approach which can lead to the discrepancy in their results. The simulated structure has been optimised. We have found the optimal oxidation thickness equal to 0.3 μm and useful shift of oxidation layer from the antinode position ensuring mode discrimination.