Title :
New low temperature poly-silicon fabrication technique by near infrared femto-second laser annealing
Author :
Wang, Yi-Chao ; Zaitsev, Alexei K. ; Pan, Ci-Ling ; Shieh, Jia-Min
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Combining ultrafast Ti:sapphire laser pulses and the sequential lateral solidification technique, we achieved films with large grains, wide laser-fluence window, at lower temperatures, than conventional annealing methods.
Keywords :
elemental semiconductors; grain size; high-speed optical techniques; infrared spectra; laser beam annealing; materials preparation; semiconductor thin films; silicon; solidification; Al/sub 2/O/sub 3/:Ti; Si; Ti:sapphire laser pulses; femtosecond laser annealing; large grains; low temperature fabrication; near infrared laser annealing; polysilicon fabrication; sequential lateral solidification technique; thin films; ultrafast laser pulses; wide laser-fluence window;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
