Title :
Direct TEM observation of amorphous Si created by femtosecond laser irradiation
Author :
Li, Ming ; Jia, Jimmy ; Thompson, Carl V.
Author_Institution :
Panasonic Boston Lab., Cambridge, MA, USA
Abstract :
This work performs a cross-sectional TEM study of holes in Si using a femtosecond laser, and observes the structure directly. Under bright-field TEM mode, a 20 to 30 nm thick amorphous layer on the silicon surface inside the hole is observed. Furthermore, an electron dispersive X-ray study proves that this layer does not contain oxygen.
Keywords :
amorphous semiconductors; elemental semiconductors; high-speed optical techniques; laser beam annealing; laser beam effects; silicon; surface structure; transmission electron microscopy; 20 to 30 nm; Si; amorphous Si; bright-field TEM mode; cross-sectional TEM; direct TEM observation; electron dispersive X-ray study; femtosecond laser irradiation; laser ablation; silicon surface;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
