Title :
Effects of wavelength and doping concentration on silicon damage threshold
Author :
Liu, Hsiao-Hua ; Mourou, Gerard ; Picard, Yoosuf N. ; Yalisove, Steven M. ; Juhasz, Tibor
Author_Institution :
Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Our damage experiment shows threshold fluence does not decrease with increasing doping concentration and its dependence on wavelength is weak, with photon energies above or below bandgap. Our results indicate impact ionization is the dominating mechanism.
Keywords :
impact ionisation; laser beam effects; semiconductor doping; silicon; Si; doping concentration; impact ionization; laser damage; silicon damage threshold; threshold fluence; wavelength effects;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
