DocumentCode
421437
Title
Electroabsorption of GaInNAs and GaInNAsSb quantum wells at 1300 and 1550 nm
Author
Lordi, Vincenzo ; Yuen, Homan B. ; Bank, Seth R. ; Wistey, Mark A. ; Harris, James S.
Author_Institution
Solid State & Photonics Lab., Stanford Univ., CA, USA
Volume
2
fYear
2004
fDate
16-21 May 2004
Abstract
Electroabsorption spectra were measured for GaInNAs and GaInNAsSb quantum wells around 1300 and 1550 nm, respectively, for use in modulators for telecommunication and optical interconnects. Fine structure of band edge transitions were further studied with photoluminescence and electroreflectance.
Keywords
III-V semiconductors; electroabsorption; electroreflectance; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; 1300 nm; 1550 nm; GaInNAs; GaInNAs quantum wells; GaInNAsSb; GaInNAsSb quantum wells; band edge transitions; electroabsorption; electroreflectance; modulators; optical interconnects; photoluminescence; telecommunication applications;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1360627
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