Title :
Electroabsorption of GaInNAs and GaInNAsSb quantum wells at 1300 and 1550 nm
Author :
Lordi, Vincenzo ; Yuen, Homan B. ; Bank, Seth R. ; Wistey, Mark A. ; Harris, James S.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Abstract :
Electroabsorption spectra were measured for GaInNAs and GaInNAsSb quantum wells around 1300 and 1550 nm, respectively, for use in modulators for telecommunication and optical interconnects. Fine structure of band edge transitions were further studied with photoluminescence and electroreflectance.
Keywords :
III-V semiconductors; electroabsorption; electroreflectance; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; 1300 nm; 1550 nm; GaInNAs; GaInNAs quantum wells; GaInNAsSb; GaInNAsSb quantum wells; band edge transitions; electroabsorption; electroreflectance; modulators; optical interconnects; photoluminescence; telecommunication applications;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
